Sensitivity improvement of an electro-optic high-impedance probe

Author(s): Nagatsuma, T.

Journal/Book: IMTC/97 IEEE INSTRUMENTATIO. 1997; 345 E 47TH ST, NEW YORK, NY 10017. Order Info: I E E E SERVICE CENTER, 445 HOES LANE, PO BOX 1331, PISCATAWAY, NJ 08855-1331 USA, 1509 pp., 294 chaps., Plates, PRICE NOT AVAILABLE (hardbound) $210.00 SET PRICE $105.00 MEMBER PRICE (softbound) Host site: OTTAWA, CANADA Sponsors: IEEE Instrumentat & Measurement Soc, IEEE Ottawa Sect. I E E E SERVICE CENTER. 865-869.

Abstract: This paper describes techniques for improving the electro-optic (EO) high-impedance probe for measuring gigahertz signals of on-board circuits. Higher sensitivity is achieved by decreasing the halfwave voltage of the EO crystal in the probe head and by increasing the laser power. To decrease the halfwave voltage, we employ Bi12TiO20, a newly developed crystal with a larger EO coefficient, and a 1.3-mu m Fabry Perot (FP) laser diode instead of a 1.55-mu m distributed-feedback (DFB) laser diode. To increase the laser output power, the sampling rate is increased by using a specially-designed laser driver unit. These techniques improve the total voltage sensitivity of the probe system 3.6 times compared to our previous system. This directly leads to a more than one order reduction of signal acquisition time. Moreover, these techniques make the probe system cost effective because they eliminate the need for expensive optical components.

Note: Article Shinagawa M, Nippon Telegraph & Tel Publ Corp, Syst Elect Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 24301, JAPAN

Keyword(s): IEEE INSTRUMENTATION AND MEASUREMENT TECHNOLOGY CONFERENCE - SENSING, PROCESSING, NETWORKING (IMTC/97); OTTAWA, CANADA. MAY 19-21, 1997

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