Zhen Ci Yan Jiu. 1989 ; 14(3): 379-82.

[The experiment studies of semiconductor GaAs-laser points irradiation the analgesic effect]

Bian XP, Yu ZQ, Liu DM.

The article reported that Rabbits threshold of Pain were made a target of observing analgesic effect of the Semiconductor GaAs laser irradiation Znsanli (V36) points. The relations between meridian with peripheral nervous and analgesic mechanism had been explored. The result showed that GaAs laser irradiation at Znsanli (V36) points not only increase basic threshold of pain for Rabbits, but also had all over analgesic effect. After irradiation fifteen minutes obviousness effect in particular. That both the low-frequency electropulse and the laser affected points can raised analgesic effect, but it showed obvious analgesic-back-effect. GaAs laser irradiation nervis fibularis profundus were similar analgesic effect to the points irradiation indicated that points irradiation stimulus conduction had relation to peripheral nervous. After intravenous injection naloxone analgesic effect that GaAs laser irradiation points arose reversion were similar acupuncture analgesia. It indicated that analgesic effect had relation release of the internal source opiate-like substance (OLS).